Full PDF Text Transcription for MJD127 (Reference)
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MJD127. For precise diagrams, and layout, please refer to the original PDF.
Epitaxial Planar PNP Transistor FEATURES High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Applications. Straight L...
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b Lead-free Lead Formed for Surface Mount Applications. Straight Lead. Complement to MJD122. Production specification MJD127 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -8 A ICP Collector Power Dissipation -16 A IB Base Current -120 mA PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)030 Rev.A www.gmesemi.
MJD127 Datasheet
