MJD127 Datasheet | Specifications & PDF Download

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general p

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for su

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Epitaxial Planar PNP Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Ap

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MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 s s s Marking MJ

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD122/D Complementary Darlington Power Transistors DPAK For Surface Mount Application

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MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general p

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MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emit

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MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Appl

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MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emit

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD127 TRANSISTOR (PNP) FEATURES High DC Current Gain El

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0-' Features ‡ +LJK'&&XUUHQW*DLQ ‡ %XLOW LQD'DPSHU'LRGHDW( & ‡ +DORJHQ)UHH *UHHQ 'HYLFH1RWH ‡ 0RLVWXUH6HQVLWLYLW\/HYHO ‡ (SR[\

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MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley, CA 93065 Tel:818-701-4933 Features • Halogen fre

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