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TIP112 Datasheet Preview

TIP112 Datasheet

NPN Epitaxial Silicon Darlington Transistor

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Production specification
NPN Epitaxial Silicon Darlington Transisor
TIP112
FEATURES
Monolithic Construction With Built in Base
-Emitter Shunt Resistors.
Complementary to TIP117.
Pb
Lead-free
High DC Current Gain:hFE=1000@VCE=4V,IC=1A.
Low Collector-Emitter Saturation Voltage.
Industrial Use.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
100 V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Crrent
Collector Dissipation
Junction and Storage Temperature
Ta=25
TC=25
100 V
5V
2
A
4
50 mA
2
W
50
-65 to +150
X020
Rev.A
www.gmesemi.com
1




GME

TIP112 Datasheet Preview

TIP112 Datasheet

NPN Epitaxial Silicon Darlington Transistor

No Preview Available !

Production specification
NPN Epitaxial Silicon Darlington Transisor
TIP112
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-emitter Sustaining Voltage VCEO(SUS) IC=30mA,IB=0
100
V
Collector Cut-off Current
ICEO VCE=50V,IB=0
2 mA
Collector Cut-off Current
ICBO VCB=100V, IE=0
1 mA
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
Collector-emitter Saturation Voltage VCE(sat)
VEB=5V,IC=0
VCE=4V,IC=1A
VCE=4V,IC=2A
IC=2A, IB=8mA
1000
500
2 mA
2.5 V
Base-emitter on Voltage
Output Capacitance
VBE(on)
Cob
VCE=4V ,IC=2A
VCB=10V, IE=0,
f=0.1MHz
2.8 V
100 pF
X020
Rev.A
www.gmesemi.com
2


Part Number TIP112
Description NPN Epitaxial Silicon Darlington Transistor
Maker GME
Total Page 4 Pages
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