Part TIP112
Description NPN Epitaxial Silicon Darlington Transistor
Category Transistor
Manufacturer Galaxy Microelectronics
Size 205.21 KB
Galaxy Microelectronics

TIP112 Overview

Key Features

  • Complementary to TIP117. Pb Lead-free
  • High DC Current Gain:hFE=1000@VCE=4V,IC=1A
  • Low Collector-Emitter Saturation Voltage
  • 65 to +150 ℃ X020 Rev.A 1 Production specification NPN Epitaxial Silicon Darlington Transisor TIP112