TIP112
Overview
- Monolithic Construction With Built in Base -Emitter Shunt Resistors.
- Complementary to TIP117. Pb Lead-free
- High DC Current Gain:hFE=1000@VCE=4V,IC=1A.
- Low Collector-Emitter Saturation Voltage.
- Industrial Use. TO-220AB
- Part: TIP112
- Description: NPN Epitaxial Silicon Darlington Transistor
- Category: Transistor
- Manufacturer: Galaxy Microelectronics
- Size: 205.21 KB
Datasheets by Manufacturer
- TIP110 — Micro Commercial Components — Silicon NPN Darlington Power Transistor
- TIP110 — Rectron — Power Transistors
- TIP110 — Motorola Semiconductor — DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
- TIP116 — Power Innovations Limited — PNP SILICON POWER DARLINGTONS
- TIP117 — Motorola Semiconductor — DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
- TIP117 — Power Innovations Limited — PNP SILICON POWER DARLINGTONS
- TIP117 — Comset Semiconductors — Silicon PNP Darlington Power Transistors
- TIP111 — TRANSYS — PLASTIC POWER TRANSISTORS
- TIP111 — Taitron Components — Darlington Power Transistors
- TIP116 — SavantIC — Silicon PNP Darlington Power Transistors