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TIP112 - NPN Epitaxial Silicon Darlington Transistor

Features

  • Monolithic Construction With Built in Base -Emitter Shunt Resistors.
  • Complementary to TIP117. Pb Lead-free.
  • High DC Current Gain:hFE=1000@VCE=4V,IC=1A.
  • Low Collector-Emitter Saturation Voltage.
  • Industrial Use. TO-220AB.

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Production specification NPN Epitaxial Silicon Darlington Transisor TIP112 FEATURES  Monolithic Construction With Built in Base -Emitter Shunt Resistors.  Complementary to TIP117. Pb Lead-free  High DC Current Gain:hFE=1000@VCE=4V,IC=1A.  Low Collector-Emitter Saturation Voltage.  Industrial Use. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ TC=25℃ 100 V 5V 2 A 4 50 mA 2 W 50 -65 to +150 ℃ X020 Rev.A www.gmesemi.
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