60N06 mosfet equivalent, n-channel enhancement mode power mosfet.
*
VDSS RDS(ON) RDS(ON)
ID
@ 4.5V(Typ) @10V (Typ)
60V
18 mΩ
14 mΩ
60A
* High density cell design for ultra low Rdson
* Fully characterized avalanche vo.
General Features
*
VDSS RDS(ON) RDS(ON)
ID
@ 4.5V(Typ) @10V (Typ)
60V
18 mΩ
14 mΩ
60A
* High density c.
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