60N06 Datasheet | Specifications & PDF Download

N-Channel Trench Power MOSFET General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching application

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N-Channel Trench Power MOSFET General Description The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applicatio

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N06 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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IPA060N06NM5S MOSFET OptiMOSTM 5 Power-Transistor, 60 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB60N06HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount

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LITE ON LITE-ON SEMICONDUCTOR LZP60N06 Features • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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UNISONIC TECHNOLOGIES CO., LTD 60N06 60A, 60V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 60N06 is N-channel enhancement mode power fi

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NTP60N06L, NTB60N06L Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK http://onsemi.com www.DataSheet4U.com Designed for low v

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP60N06-14 ·FEATURES ·With low gate drive requirements ·Easy to drive ·High current capabili

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NTP60N06, NTB60N06 Power MOSFET 60 V, 60 A, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies,

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NTP60N06, NTB60N06 Power MOSFET 60 V, 60 A, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies,

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NP60N06VDK 60 V – 60 A – N-channel Power MOS FET Application: Automotive Data Sheet R07DS1340EJ0200 Rev.2.00 May 24, 2018 Description NP60N06VDK is

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Silicon Carbide (SiC) MOSFET – EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L NTBG060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 m

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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www.DataSheet4U.com OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

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isc N-Channel MOSFET Transistor 60N06-14 ·DESCRIPTION ·High current capability ·Avalanche rugged technology ·Low gate charge ·Fast Switching Speed ·

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