60N06 Datasheet | Specifications & PDF Download

www.DataSheet4U.com OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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NP60N06VDK 60 V – 60 A – N-channel Power MOS FET Application: Automotive Data Sheet R07DS1340EJ0200 Rev.2.00 May 24, 2018 Description NP60N06VDK is

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP060N06N，IIPP060N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhancem

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MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 44 mW, 47 A NVH4L060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW

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Shantou Huashan Electronic Devices Co.,Ltd. HFP60N06 N-Channel Enhancement Mode Field Effect Transistor █ Applications • Servo motor control. • Pow

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 8A G UIS, Rg 100% Tested S

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 12A G UIS, Rg 100% Tested

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 12A G UIS, Rg 100% Tested

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TEMIC Siliconix N-Channel Enhancement-Mode 1ransistor 175°C Maximum Junction Temperature SUP60N06-08 Product Summary V(BR)nSS (V) 60 rnS(on) (Q) 0

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 12A G UIS, Rg 100% Tested

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SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.018 ID (A) 60 TO-220AB D TO-263

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NTP60N06L, NTB60N06L Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK http://onsemi.com www.DataSheet4U.com Designed for low v

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N-Channel 60-V (D-S) MOSFET SUP60N06-12P Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.012 at VGS = 10 V ID (A) 60d Qg (Typ.) 33 T

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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60A 650V Trench Fieldstop IGBT with anti-parallel diode Datasheet SRE60N065FSUD6 General Description The SRE60N065FSUD6 is a Field Stop Trench IGBT

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www.vishay.com SQM60N06-15 Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A)

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