60N06 Datasheet | Specifications & PDF Download

Description AP60N06NF 65V N-Channel Enhancement Mode MOSFET The AP60N06NF uses advanced APM-SGTⅠⅠtechnology to provide excellent RDS(ON), low gate c

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IPA060N06NM5S MOSFET OptiMOSTM 5 Power-Transistor, 60 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on

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EMB60N06A-VB EMB60N06A-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.0

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N-Channel Trench Power MOSFET General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching application

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UNISONIC TECHNOLOGIES CO., LTD 60N06 60A, 60V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 60N06 is N-channel enhancement mode power fi

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N-Channel Trench Power MOSFET General Description The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applicatio

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（） CRSM060N06L2 SkyMOS2 N-MOSFET 63V, 5.3mΩ, 60A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excelle

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Silicon Carbide (SiC) MOSFET – EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L NTBG060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 m

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N06 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on

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www.vishay.com SQM60N06-15 Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A)

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G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate cha

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60N06 N-Channel Enhancement Mode Power MOSFET Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate cha

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Silicon N-Channel Power MOSFET CS60N06 C4 ○R General Description： CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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CMT60N06G N-CHANNEL Logic Level Power MOSFET APPLICATION ‹ ‹ ‹ DC motor control UPS Class D Amplifier VDSS 60V RDS(ON) Typ. 15.8mΩ ID 60A FEATURES ‹

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TEMIC Siliconix SMW60N06·18 N-Channel Enhancement-Mode Transistor, 1S-mQ rDS(on) Product Summary V(BR)OSS (V) 60 rOS(on) (0) 0.018 TO-247AD DOl

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STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB60N06-14 V DSS 60 V R DS(on) < 0.014 Ω ID 60 A s s s s s s s

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