isc N-Channel MOSFET Transistor INCHANGE Semicond.
60N06 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 60N06 60A, 60V N-CHANNEL POWER MOSFET Power MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power fi.IPP060N06N - Power-Transistor
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .P60N06 - STP60N06
DataSheet.in DataSheet.in DataSheet.in DataSheet.in DataSheet.in DataSheet.in DataSheet.in .CS60N06 - N-Channel Trench Power MOSFET
N-Channel Trench Power MOSFET General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching application.SMP60N06-14 - N-Channel Enhancement Mode Transistor
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .LZP60N06 - N-Channel Transistor
LITE ON LITE-ON SEMICONDUCTOR LZP60N06 Features • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate.CS60N06A - N-Channel Trench Power MOSFET
N-Channel Trench Power MOSFET General Description The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applicatio.MTB60N06HD - Power MOSFET
MTB60N06HD Preferred Device Power MOSFET 60 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and.CRSM260N06LDQ - SkyMOS1 N-MOSFET
() Features • Dual N-channel Logic Level - Enhancement mode • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excelle.HFP60N06 - N-Channel Enhancement Mode Field Effect Transistor
Shantou Huashan Electronic Devices Co.,Ltd. HFP60N06 N-Channel Enhancement Mode Field Effect Transistor █ Applications • Servo motor control. • Pow.SQM60N06-15 - Automotive N-Channel MOSFET
www.vishay.com SQM60N06-15 Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) .EMB60N06H - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 58mΩ ID 15A G UIS, Rg 100% Tested .EMB60N06V - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 8A G UIS, Rg 1.EMB60N06J - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 3.5A G UIS, Rg 100% Tested .SW60N06T - MOSFET
SAMWIN SW60N06T N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max8mΩ)@VGS=10V ■ Gate Charge (Typical 77nC) ■ Improved dv/d.SMW60N06-18 - N-Channel MOSFET
TEMIC Siliconix SMW60N06·18 N-Channel Enhancement-Mode Transistor, 1S-mQ rDS(on) Product Summary V(BR)OSS (V) 60 rOS(on) (0) 0.018 TO-247AD DOl.SUB60N06-08 - N-Channel MOSFET
TEMIC Siliconix N-Channel Enhancement-Mode 1ransistor 175°C Maximum Junction Temperature SUB60N06-08 Product Summary V(BR)nSS (V) 60 rnS(on) (0) 0.