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G23N06 Datasheet, GOFORD

G23N06 Datasheet, GOFORD

G23N06

datasheet Download (Size : 572.76KB)

G23N06 Datasheet

G23N06 mosfet equivalent, n-channel enhancement mode power mosfet.

G23N06

datasheet Download (Size : 572.76KB)

G23N06 Datasheet

Features and benefits

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 60V 23A < 35mΩ < 40mΩ Schematic diagram Applicati.

Application

General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested .

Description

The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avala.

Image gallery

G23N06 Page 1 G23N06 Page 2 G23N06 Page 3

TAGS

G23N06
N-Channel
Enhancement
Mode
Power
MOSFET
GOFORD

Manufacturer


GOFORD

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