GS-065-018-2-L Datasheet

Features and Benefits

• 650 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled, 8x8 mm PDFN package
• RDS(on) = 78 mΩ
• IDSmax,DC = 18 A / IDsmax,Pulse = 35 A
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• High switching frequency.