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GS-065-018-2-L Datasheet, GaN Systems

GS-065-018-2-L Datasheet, GaN Systems

GS-065-018-2-L

datasheet Download (Size : 865.59KB)

GS-065-018-2-L Datasheet

GS-065-018-2-L transistor

650v e-mode gan transistor.

GS-065-018-2-L

datasheet Download (Size : 865.59KB)

GS-065-018-2-L Datasheet

GS-065-018-2-L Features and benefits

GS-065-018-2-L Features and benefits


* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, 8x8 mm PDFN package
* RDS(on) = 78 mΩ
* IDSmax,DC.

GS-065-018-2-L Application

GS-065-018-2-L Application


* Consumer and Industrial Power Supplies
* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging.

GS-065-018-2-L Description

GS-065-018-2-L Description

The GS-065-018-2-L is a 650V enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented.

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GS-065-018-2-L Page 1 GS-065-018-2-L Page 2 GS-065-018-2-L Page 3

TAGS

GS-065-018-2-L
650V
E-mode
GaN
transistor
GaN Systems

Manufacturer


GaN Systems

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