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GS-065-018-2-L Datasheet - GaN Systems

650V E-mode GaN transistor

GS-065-018-2-L Features

* 650 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, 8x8 mm PDFN package

* RDS(on) = 78 mΩ

* IDSmax,DC = 18 A / IDsmax,Pulse = 35 A

* Simple gate drive requirements (0 V to 6 V)

* Transient tolera

GS-065-018-2-L General Description

The GS-065-018-2-L is a 650V enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes hig.

GS-065-018-2-L Datasheet (865.59 KB)

Preview of GS-065-018-2-L PDF

Datasheet Details

Part number:

GS-065-018-2-L

Manufacturer:

GaN Systems

File Size:

865.59 KB

Description:

650v e-mode gan transistor.

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GS-065-018-2-L 650V E-mode GaN transistor GaN Systems

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