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GS61004B - 100V enhancement mode GaN transistor

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GaN Systems

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GS61004B 100V enhancement mode GaN transistor by GaN Systems - Datasheet Preview — Datasheet preview – GS61004B

Datasheet Details

Part number	GS61004B
Manufacturer	GaN Systems
File Size	883.06 KB
Description	100V enhancement mode GaN transistor
Datasheet	GS61004B Datasheet
Additional preview pages of the GS61004B datasheet.

Product details

Description

The GS61004B is an enhancement mode GaN-on-Silicon power transistor.

Features

100V enhancement mode power transistor.
Bottom-side cooled configuration.
RDS(on) = 16 mΩ.
IDS(max) = 38 A.
Ultra-low FOM Island Technology® die.
Low inductance GaNPX® package.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reve.

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Published: Jun 17, 2024 |