GS61004B Datasheet

Features and Benefits

• 100V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 16 mΩ
• IDS(max) = 38 A
• Ultra-low FOM Island Technology® die
• Low inductance GaNPX® package
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching f.