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GS61004B Datasheet 100v Enhancement Mode Gan Transistor

Manufacturer: GaN Systems

Overview: GS61004B 100V enhancement mode GaN transistor Datasheet.

Datasheet Details

Part number GS61004B
Manufacturer GaN Systems
File Size 883.06 KB
Description 100V enhancement mode GaN transistor
Datasheet GS61004B-GaNSystems.pdf

General Description

The GS61004B is an enhancement mode GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown, high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Key Features

  • 100V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 16 mΩ.
  • IDS(max) = 38 A.
  • Ultra-low FOM Island Technology® die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reve.

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