GS61004B Datasheet | GaN Systems

GS61004B 100V enhancement mode GaN transistor Features - 100V enhancement mode power transistor - Bottom-side cooled configuration - RDS(on) = 16 mΩ - IDS(max) = 38 A - Ultra-low FOM Island Technology® die - Low inductance GaNPX® package - Simple gate drive requirements (0 V to 6 V) - Transient tolerant gate drive (-20 V / +10 V) - Very high switching frequency (> 10 MHz) - Fast and controllable fall and rise times - Reverse current capability - Zero reverse recovery loss - Small 4.6 x 4.4 mm2 PCB footprint - RoHS 3 (6+4) pliant Package Outline Circuit Symbol Applications - Enterprise and networking power - Uninterruptable power supplies - Industrial motor drives - Solar...