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GS61008T - Top-side cooled 100V E-mode GaN transistor

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GaN Systems

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GS61008T Top-side cooled 100V E-mode GaN transistor by GaN Systems - Datasheet Preview — Datasheet preview – GS61008T

Datasheet Details

Part number	GS61008T
Manufacturer	GaN Systems
File Size	965.05 KB
Description	Top-side cooled 100V E-mode GaN transistor
Datasheet	GS61008T Datasheet
Additional preview pages of the GS61008T datasheet.

Product details

Description

The GS61008T is an enhancement mode GaN-onsilicon power transistor.

Features

100 V enhancement mode power transistor.
Top-side cooled configuration.
RDS(on) = 7 mΩ.
IDS(max) = 90 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse recovery loss.

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Published: Jun 17, 2024 |