GS61008T Datasheet

Features and Benefits

• 100 V enhancement mode power transistor
• Top-side cooled configuration
• RDS(on) = 7 mΩ
• IDS(max) = 90 A
• Ultra-low FOM die
• Low inductance GaNPX® package
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• .