GS61008T
GS61008T is Top-side cooled 100V E-mode GaN transistor manufactured by GaN Systems.
GS61008T Top-side cooled 100 V E-mode GaN transistor
Features
- 100 V enhancement mode power transistor
- Top-side cooled configuration
- RDS(on) = 7 mΩ
- IDS(max) = 90 A
- Ultra-low FOM die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 7.0 x 4.0 mm2 PCB footprint
- Dual gate pads for optimal board layout
- RoHS 3 (6 + 4) pliant
Package Outline
Circuit Symbol
The top-side thermal pad is internally connected to Source (S pin 3) and...
