High Temperature Silicon Carbide Power Schottky Diode
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GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Low VF for High Temperature Operation • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness
Advantages
• Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching
TM
Package
VRRM
=
IF (TL ≤ 150°C) =
QC
=
1200 V 1A 5 nC
K
RoHS
DO-214
A
REACH
Applications
• High Voltage Sensing • Solar Inverters • Electric Vehicles • Hi
GB01SLT12-214 Datasheet
