GFD2206 Datasheet (N-Channel Enhancement Mode MOSFET)

Part: GFD2206
Manufacturer: General Semiconductor
Size: 117.37 KB

GFD2206 Key Features

Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Rugged-Avalanche Energy Rated
Fast Switching for High Efficiency
55 to 150 2 40
22 25 4.0
35 160 120 90
Qg Qgs Qgd td(on) tr
36 65 15 17 20 107 92 56 3425 320 162

Related General Semiconductor Datasheets

Part Number	Description
GFD25N03	N-Channel Enhancement Mode MOSFET
GFD30N03	N-Channel Enhancement Mode MOSFET
GFD50N03	N-Channel Enhancement Mode MOSFET
GFD50N03A	N-Channel Enhancement Mode MOSFET

GFD2206 Description

0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.6) Mounting Pad Layout Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed:.