GSM2151E mosfet equivalent, 25v p-channel enhancement mode mosfet.
* -25V, -4.3A, RDS(ON)=50mΩ@VGS=-10V
* Fast switching
* Suit for -4.5V Gate Drive Applications
* G-S ESD Protection Diode Embedded
* Green Device Avai.
Features
* -25V, -4.3A, RDS(ON)=50mΩ@VGS=-10V
* Fast switching
* Suit for -4.5V Gate Drive Applications
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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