GSM2307P mosfet equivalent, p-channel mosfet.
* -20V, -6.5A, RDS(ON)=26mΩ@VGS=-4.5
* Improved dv/dt capability
* Fast switching
* Suit for -1.8V Gate Drive Applications
* Green Device Available
Features
* -20V, -6.5A, RDS(ON)=26mΩ@VGS=-4.5
* Improved dv/dt capability
* Fast switching
* Suit for .
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
TAGS
Download (Size : 539.35KB)