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GSM2307P Datasheet P-Channel MOSFET

Manufacturer: Globaltech

Datasheet Details

Part number GSM2307P
Manufacturer Globaltech
File Size 539.35 KB
Description P-Channel MOSFET
Download GSM2307P Download (PDF)

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

GSM2307P 20V P-Channel MOSFETs Product.

Key Features

  • -20V, -6.5A, RDS(ON)=26mΩ@VGS=-4.5.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for -1.8V Gate Drive.