GSM2319Y mosfet equivalent, p-channel mosfet.
* -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Suit for -1.5V Gate Drive Applications
* Green Device Available.
Features
* -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Suit f.
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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