GSM4422 Description
GSM4422, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM4422SF (SOP-8).
GSM4422 Key Features
- 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V
- 30V/ 6.0A,RDS(ON)=42mΩ@VGS=4.5V
- 30V/ 5.2A,RDS(ON)=50mΩ@VGS=2.5V
- Super high density cell design for extremely
- SOP-8P package design