GSM4435S Description
GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM4435S Key Features
- 30V/-9A,RDS(ON)=18mΩ@VGS=-10V
- 30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V
- Super high density cell design for extremely
- SOP-8P package design