GSM4953WS Description
GSM4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM4953WS Key Features
- 30V/-5.4A,RDS(ON)=60mΩ@VGS=-10V
- 30V/-4.2A,RDS(ON)=80mΩ@VGS=-4.5V
- Super high density cell design for extremely
- SOP-8P package design