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GSMDEW2206 Datasheet - Globaltech

Dual N-Channel MOSFET

GSMDEW2206 Features

* 20V, 10A, RDS(ON)=8.5mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Suit for 1.8V Gate Drive Applications

* G-S ESD protection diode embedded

* Green Device Available

* TSSOP-8 package design Applications

* Notebook

GSMDEW2206 General Description

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSMDEW2206 Datasheet (491.61 KB)

Preview of GSMDEW2206 PDF

Datasheet Details

Part number:

GSMDEW2206

Manufacturer:

Globaltech

File Size:

491.61 KB

Description:

Dual n-channel mosfet.

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GSMDEW2206 Dual N-Channel MOSFET Globaltech

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