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GSMDK2314 Datasheet - Globaltech

GSMDK2314 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDK2314 Features

* 20V, 5.6A, RDS(ON)=26mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Suit for 1.8V Gate Drive Applications

* Green Device Available

* SOT-89 package design Applications

* Notebook

* Load Switch

* Hand-Held Instrumen

GSMDK2314-Globaltech.pdf