GSMEB2516Q Datasheet - Globaltech

Dual N-Channel MOSFET

GSMEB2516Q Features

* 20V, 11A, RDS(ON)=8.2mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* G-S ESD Protection Diode Embedded

* Green Device Available

* DFN2X3-6L package design Applications

* Handheld Instruments

* POL Applications

* Bat

GSMEB2516Q General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMEB2516Q Datasheet (481.61 KB)

GSMEB2516Q Datasheet Preview — Preview of GSMEB2516Q PDF

Datasheet Details

Part number:

GSMEB2516Q

Manufacturer:

Globaltech

File Size:

481.61 KB

Description:

Dual n-channel mosfet.

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GSMEB2516Q Dual N-Channel MOSFET Globaltech

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GSMEB2516Q Features

GSMEB2516Q General Description

Datasheet Details

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