GSMJF15N60 - N-Channel MOSFET

Globaltech

General Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Key Features

600V, 15A, RDS(ON)=295mΩ@VGS=10V.
Improved dv/dt capability.
Fast switching.
100% EAS guaranteed.
Green Device Available.
TO-220F package design.

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GSMJF15N60 n-channel mosfet by Globaltech - Datasheet Preview

Datasheet Details

Part number	GSMJF15N60
Manufacturer	Globaltech
File Size	683.22 KB
Description	N-Channel MOSFET
Datasheet	GSMJF15N60 Datasheet

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Full PDF Text Transcription (Reference)

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GSMJF15N60 600V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.