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HM12N60F Datasheet 600V N-Channel MOSFET

Manufacturer: H&M Semiconductor

Download the HM12N60F datasheet PDF. This datasheet also includes the HM12N60 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HM12N60-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

HM12N60 / HM12N60F 600V N-Channel MOSFET General.

Key Features

  • 12.0A, 600V, RDS(on) = 0.65Ω @VGS = 10 V.
  • Low gate charge ( typical 52nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sou.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
VBsemi Logo HM12N60 N-Channel 650V Power MOSFET VBsemi

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