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HM12N60F - 600V N-Channel MOSFET

Product Overview

H&M Semiconductor

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HM12N60F 600V N-Channel MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM12N60F

Datasheet Details

Part number	HM12N60F
Manufacturer	H&M Semiconductor
File Size	316.76 KB
Description	600V N-Channel MOSFET
Datasheet	HM12N60F Datasheet
Note	This datasheet PDF includes multiple part numbers: HM12N60F, HM12N60. Please refer to the document for exact specifications by model.
Additional preview pages of the HM12N60F datasheet.

Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

12.0A, 600V, RDS(on) = 0.65Ω @VGS = 10 V.
Low gate charge ( typical 52nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sou.

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Published: Sep 30, 2015 |