HM1N6035 - Silicon N-Channel Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM1N6035
Manufacturer	H&M Semiconductor
File Size	1.22 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	HM1N6035 Datasheet
Additional preview pages of the HM1N6035 datasheet.

Product details

Description

VDSS 600 HM1N60PR, the silicon N-channel Enhanced ID 1.0 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-89-3L, which accords with the RoHS standard.

Features

z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test.

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Published: Apr 18, 2024 |