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HM1N6035 Datasheet Silicon N-channel Power MOSFET

Manufacturer: H&M Semiconductor

Overview:  Silicon N-Channel Power MOSFET HM1N6035 General.

General Description

: VDSS 600 HM1N60PR, the silicon N-channel Enhanced ID 1.0 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is SOT-89-3L, which accords with the RoHS standard.

Key Features

  • z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test.

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