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HM1N6035 Datasheet - H&M Semiconductor

Silicon N-Channel Power MOSFET

HM1N6035 Features

* z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parame

HM1N6035 General Description

VDSS 600 HM1N60PR, the silicon N-channel Enhanced ID 1.0 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche energy. The transistor can be used in various power .

HM1N6035 Datasheet (1.22 MB)

Preview of HM1N6035 PDF

Datasheet Details

Part number:

HM1N6035

Manufacturer:

H&M Semiconductor

File Size:

1.22 MB

Description:

Silicon n-channel power mosfet.

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HM1N6035 Silicon N-Channel Power MOSFET H&M Semiconductor

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