Datasheet4U Logo Datasheet4U.com

HM10DP06D - P-Channel Enhancement Mode Field Effect Transistor

General Description

Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-so

📥 Download Datasheet

Full PDF Text Transcription for HM10DP06D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM10DP06D. For precise diagrams, and layout, please refer to the original PDF.

HM'3' P-Channel Enhancement Mode Field Effect Transistor  Product Summary ● VDS -60V ● ID -10A ● RDS(ON)( at VGS= -4....

View more extracted text
● RDS(ON)( at VGS= -4.

More Datasheets from H&M Semiconductor

Part Number Description
HM10DN06D N-Channel Enhancement Mode Power MOSFET
HM100N03 N-Channel Enhancement Mode Power MOSFET
HM100N03D N-Channel Enhancement Mode Power MOSFET
HM100N03GA N-Channel Enhancement Mode Power MOSFET
HM100N03KA N-Channel Enhancement Mode Power MOSFET
HM100P03K MOSFET
HM100P35E MOSFET
HM1084 5A LOW DROPOUT POSITIVE REGULATOR
HM10N10K N-Channel Enhancement Mode Power MOSFET
HM10N15D N-Channel Enhancement Mode Power MOSFET