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HM10N10K - N-Channel Enhancement Mode Power MOSFET

General Description

The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Full PDF Text Transcription for HM10N10K (Reference)

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HM10N10K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It...

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ology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =100V,ID =9.

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