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HM10N10K - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM10N10K N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM10N10K

Datasheet Details

Part number	HM10N10K
Manufacturer	H&M Semiconductor
File Size	436.21 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM10N10K Datasheet
Additional preview pages of the HM10N10K datasheet.

HM10N10K Product details

Description

The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ).
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jul 14, 2025 |