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HM10N60F - 600V N-Channel MOSFET

Download the HM10N60F datasheet PDF. This datasheet also covers the HM10N60 variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V.
  • Low gate charge ( typical 48nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM10N60-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for HM10N60F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM10N60F. For precise diagrams, and layout, please refer to the original PDF.

HM10N60 / HM10N60F +010N60 / +010N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This...

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produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 10.0A, 600V, RDS(on) = 0.

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