Datasheet Details
| Part number | HM10N65D |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 650.32 KB |
| Description | 650V N-Channel MOSFET |
| Datasheet |
 HM10N65D Datasheet
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General Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.
Key Features
- 10A, 650V, RDS(on) = 1.09Ω @VGS = 10 V.
- Low gate charge ( typical 52nC).
- High ruggedness.
- Fast wsitching.
- 100% avalanche tested.
- Improved dv/dt capability {D TO-263-2L G D S TO-220F.
- ◀▲ {G.
- {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-.