Datasheet Details
| Part number | HM10N60 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 350.94 KB |
| Description | 600V N-Channel MOSFET |
| Datasheet |
 HM10N60 Datasheet
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General Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V.
- Low gate charge ( typical 48nC).
- High ruggedness.
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
- ◀▲ {G.
- {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS.