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HM10N15D - N-Channel Enhancement Mode Power MOSFET

General Description

The HM10N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 150V,ID =10A RDS(ON).

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Full PDF Text Transcription for HM10N15D (Reference)

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HM10N15D N-Channel Enhancement Mode Power MOSFET Description The HM10N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It...

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ology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID =10A RDS(ON) <75mΩ @ VGS=10V (Typ:62mΩ) RDS(ON) <80mΩ @ VGS=4.

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