HM10N65F - 650V N-Channel MOSFET

This page provides the datasheet information for the HM10N65F, a member of the HM10N65D 650V N-Channel MOSFET family.

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM10N65F
Manufacturer	H&M Semiconductor
File Size	650.32 KB
Description	650V N-Channel MOSFET
Datasheet	HM10N65F Datasheet
Additional preview pages of the HM10N65F datasheet.

HM10N65F Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

10A, 650V, RDS(on) = 1.09Ω @VGS = 10 V.
Low gate charge ( typical 52nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D TO-263-2L G D S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-.

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Published: Jun 30, 2025 |