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HM10N65F - 650V N-Channel MOSFET

Download the HM10N65F datasheet PDF. This datasheet also covers the HM10N65D variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Key Features

  • 10A, 650V, RDS(on) = 1.09Ω @VGS = 10 V.
  • Low gate charge ( typical 52nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D TO-263-2L G D S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM10N65D-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for HM10N65F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM10N65F. For precise diagrams, and layout, please refer to the original PDF.

HM10N65D / HM10N65F HM10N65D / HM10N65F 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. Th...

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is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features • 10A, 650V, RDS(on) = 1.

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