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HM10N80A - N-channel Enhanced VDMOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test.

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HM10N80A General Description： VDSS 800 HM10N80A, the silicon N-channel Enhanced ID 10 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 60 which red...

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obtained by the self-aligned planar Technology PD(TC=25℃) 60 which reduce the conduction loss, improve switching RDS(ON)Typ 0.72 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER.

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