HM2310B - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM2310B by H&M Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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HM2310B N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Official preview page of the **HM2310B** N-Channel Enhancement Mode Power MOSFET datasheet (H&M Semiconductor).

Datasheet Details

Part number	HM2310B
Manufacturer	H&M Semiconductor
File Size	690.38 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2310B-HMSemiconductor.pdf
Additional preview pages of the HM2310B datasheet.

HM2310B Product details

Description

The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. 60V/4.0A, RDS(ON) = 55mΩ

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Published: Nov 27, 2018 |