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HM2312 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM2312 by H&M Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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HM2312 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Official preview page of the HM2312 N-Channel Enhancement Mode Power MOSFET datasheet (H&M Semiconductor).

Datasheet Details

Part number	HM2312
Manufacturer	H&M Semiconductor
File Size	453.94 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2312-HMSemiconductor.pdf
Additional preview pages of the HM2312 datasheet.

HM2312 Product details

Description

The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2312 Marking and pin assignment.

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Published: Nov 27, 2018 |