HM2312B mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired
* Su.
The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
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