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HM4443 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM4443 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.

Features

  • VDS = -40V,ID = -5.0A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – HM4443

Datasheet Details

Part number HM4443
Manufacturer H&M Semiconductor
File Size 412.26 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4443 Datasheet
Additional preview pages of the HM4443 datasheet.

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Full PDF Text Transcription

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HM4443 P-Channel Enhancement Mode Power MOSFET Description The HM4443 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. General Features ● VDS = -40V,ID = -5.0A RDS(ON) < 126mΩ @ VGS=-4.
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