HM4486A Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =100V,ID =4A RDS(ON) < 90mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < 100mΩ @ VGS=4.5V (Typ:80mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard switched and high frequency circuits HM4486A Marking and pin Assignment 100%...