Datasheet4U Logo Datasheet4U.com

HM4622 - N & P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) and low gate charge .

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • N-Channel VDS = 20V,ID =5.0A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.2V.
  • P-Channel VDS = -20V,ID = -5.0A RDS(ON) < 52mΩ @ VGS=-4.5V RDS(ON) < 75mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount pack age N-channel P-channel Schematic diagram HM4622 Marking and pin assignment.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM4-6514-B 1024 x 4 CMOS RAM Intersil Corporation
HM4-6516-9 2K x 8 CMOS RAM Intersil Corporation
HM4-65162-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation
HM4-65162B-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation
HM4-65162C-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation

Other Datasheets by H&M Semiconductor

Part Number Description
HM4622A N & P-Channel Enhancement Mode Power MOSFET
HM4622Q N And P-Channel Enhancement Mode MOSFET
HM4620D N & P-Channel Enhancement Mode Power MOSFET
HM4606 N & P-Channel Enhancement Mode Power MOSFET
HM4606A N & P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM4622 N and P-Channel Enhancement Mode Power MOSFET Description The HM4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● N-Channel VDS = 20V,ID =5.0A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.2V ● P-Channel VDS = -20V,ID = -5.0A RDS(ON) < 52mΩ @ VGS=-4.5V RDS(ON) < 75mΩ @ VGS=-2.