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HM4622Q - N And P-Channel Enhancement Mode MOSFET

General Description

charge .

other applications.

Key Features

  • N-channel： VDS =20V,ID =25A RDS(ON)=8.2mΩ (typical) @ VGS=2.5V RDS(ON)=6.2mΩ (typical) @ VGS=4.5V P-Channel： VDS =-20V,ID =-25A RDS(ON)=17.5mΩ (typical) @ VGS=-2.5V RDS(ON)=13mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested 100% UIS TESTED!.

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Other Datasheets by H&M Semiconductor

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Full PDF Text Transcription (Reference)

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HM4 N And P-Channel Enhancement Mode MOSFET Description The HM4622Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features  N-channel： VDS =20V,ID =25A RDS(ON)=8.2mΩ (typical) @ VGS=2.5V RDS(ON)=6.2mΩ (typical) @ VGS=4.5V P-Channel： VDS =-20V,ID =-25A RDS(ON)=17.5mΩ (typical) @ VGS=-2.5V RDS(ON)=13mΩ (typical) @ VGS=-4.