HM4622Q Datasheet N And P-channel Enhancement Mode MOSFET

Manufacturer: H&M Semiconductor

Overview: HM4 N And P-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number	HM4622Q
Manufacturer	H&M Semiconductor
File Size	805.94 KB
Description	N And P-Channel Enhancement Mode MOSFET
Datasheet	HM4622Q-HMSemiconductor.pdf

The HM4622Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

N-channel： VDS =20V,ID =25A RDS(ON)=8.2mΩ (typical) @ VGS=2.5V RDS(ON)=6.2mΩ (typical) @ VGS=4.5V P-Channel： VDS =-20V,ID =-25A RDS(ON)=17.5mΩ (typical) @ VGS=-2.5V RDS(ON)=13mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested 100% UIS TESTED!.

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