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HM4620D - N & P-Channel Enhancement Mode Power MOSFET

General Description

The HM' uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-Channel VDS = 20V,ID =A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V.
  • P-Channel VDS = -20V,ID = -A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Pin assignment Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 20.
  • HM' ')1;/ Ø180mm 8mm Absolute Maximum Ratin.

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HM' N and P-Channel Enhancement Mode Power MOSFET Description The HM' uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V ● P-Channel VDS = -20V,ID = -A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.