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HM4622A - N & P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) and low gate charge .

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • N-Channel VDS = 20V,ID =7.5A RDS(ON).

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HM4622A N and P-Channel Enhancement Mode Power MOSFET Description The HM4622A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● N-Channel VDS = 20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) RDS(ON) <13mΩ @ VGS=4.5V (Typ:11mΩ) ● P-Channel VDS = -20V,ID = -7.0A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.