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H&M Semiconductor

HM5N60F Datasheet Preview

HM5N60F Datasheet

N-CHANNEL MOSFET

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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
HM5N60
主要参数 MAIN CHARACTERISTICS
封装 Package
ID .0 A
VDSS 600 V
Rdson(@Vgs=10V) 2.4Ω
Qg 13.3nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
zCrss (典型值 9pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 9pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
印记
封装
Order codes Marking Package
HMN60I HMN60I IPAK
HM N60K HMN60K DPAK
HMN60
HMN60 TO-220C
HM N60F HMN60F TO-220MF
无卤素
Halogen Free
NO
NO
NO
NO
包装
Packaging
Tube
Tube
Tube
Tube
器件重量
Device Weight
0.35 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
1/11




H&M Semiconductor

HM5N60F Datasheet Preview

HM5N60F Datasheet

N-CHANNEL MOSFET

No Preview Available !

R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
HM5N60
项目
Parameter
符号
Symbol
HM5N60I/K
数值
Value
HM5N60
HM5N60F
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
连续漏极电流
Drain Current -continuous
ID
T=25
T=100
最大脉冲漏极电流(注 1
Drain Current - pulse
note 1
IDM
最高栅源电压
Gate-Source Voltage
VGSS
单脉冲雪崩能量(注 2
Single Pulsed Avalanche
Energy
EAS
note 2
雪崩电流(注 1
Avalanche Current
note 1
IAR
重复雪崩能量(注 1
Repetitive Avalanche Current
note 1
EAR
二极管反向恢复最大电压变化
速率(注 3
Peak Diode Recovery
dv/dt
dv/dt note 3
耗散功率
Power Dissipation
PD
TC=25
-Derate
above
51
0.39
25
最高结温及存储温度
Operating and Storage
Temperature Range
TJTSTG
引线最高焊接温度
Maximum Lead Temperature
for Soldering Purposes
TL
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
600
5.0
2.5
16
±30
240
5.0
10.0
5.5
100
0.80
-55+150
300
5.0*
2.5*
16*
33
0.26
Uni
t
V
A
A
A
V
mJ
A
mJ
V/n
s
W
W/
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
2/11


Part Number HM5N60F
Description N-CHANNEL MOSFET
Maker H&M Semiconductor
Total Page 11 Pages
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