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HM640
General Description：
HM640, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which accords
with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.18Ω)
l Low Gate Charge (Typical Data:24nC)
l Low Reverse transfer capacitances(Typical:25pF)
l 100% Single Pulse avalanche energy Test
Applications：
CRT、TV/Monitor and Lighting.
HM640 Datasheet
