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HY1103S Datasheet N-Channel MOSFET

Manufacturer: HUAYI

Datasheet Details

Part number HY1103S
Manufacturer HUAYI
File Size 0.96 MB
Description N-Channel MOSFET
Datasheet download datasheet HY1103S Datasheet

General Description

SOP8L Applications z Switching Application z Power Management for DC/DC z Battery Protection Ordering and Marking Information S HY1103 YYXXXJWW G N-Channel MOSFET Package Code S: SOP8L Date Code YYXXX WW Assembly Material G:Halogen Free Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.

www.hymexa.com V1.0 1 HY1103S Absolute Maximum Ratings Symbol Parameter Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RTJc Thermal Resistance, Junction-to-Case RTJA Thermal Resistance, Junction-to-Ambient EAS SinglePulsed-Avalanche Energy ** Tc=25°C Tc=25°C Tc=25°C Tc=100°C Tc=25°C Tc=100°C L=0.3mH Note: * Repetitive rating˗pulse width limited by max.junction temperature.

Overview

HY1103S N-Channel Enhancement Mode MOSFET Feature z 30V/11A RDS(ON)=9.5mΩ(typ.)@VGS = 10V RDS(ON)=11.5mΩ(typ.)@VGS = 4.