Datasheet Details
| Part number | HYG025N04LQ1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 804.59 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 HYG025N04LQ1D Datasheet
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| Part number | HYG025N04LQ1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 804.59 KB |
| Description | N-Channel MOSFET |
| Datasheet |
HYG025N04LQ1D Datasheet
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GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G025N04 XYMXXXXXX U G025N04 XYMXXXXXX V G025N04 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L Date Code XYMXXXXXX V:TO-251-3S Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature 40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.
| Part Number | Description |
|---|---|
| HYG025N04LQ1U | N-Channel MOSFET |
| HYG025N04LQ1V | N-Channel MOSFET |
| HYG025N04NA1D | N-Channel Enhancement Mode MOSFET |
| HYG025N06LS1B | N-Channel Enhancement Mode MOSFET |
| HYG025N06LS1C2 | N-Channel Enhancement Mode MOSFET |
| HYG025N06LS1D | N-Channel Enhancement Mode MOSFET |
| HYG025N06LS1P | N-Channel Enhancement Mode MOSFET |
| HYG025N06LS2B | N-Channel Enhancement Mode MOSFET |
| HYG025N06LS2C2 | N-Channel Enhancement Mode MOSFET |
| HYG025N06LS2P | N-Channel Enhancement Mode MOSFET |