HYG025N04LQ1U Datasheet N-Channel MOSFET

Manufacturer: HUAYI

Download the HYG025N04LQ1U datasheet PDF. This datasheet also includes the HYG025N04LQ1D variant, as both parts are published together in a single manufacturer document.

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HYG025N04LQ1U n-channel mosfet by HUAYI - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HYG025N04LQ1D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HYG025N04LQ1U
Manufacturer	HUAYI
File Size	804.59 KB
Description	N-Channel MOSFET
Datasheet	HYG025N04LQ1U Datasheet

General Description

GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G025N04 XYMXXXXXX U G025N04 XYMXXXXXX V G025N04 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L Date Code XYMXXXXXX V:TO-251-3S Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

Overview

HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.

More Datasheets from HUAYI

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HYG025N06LS2B	N-Channel Enhancement Mode MOSFET
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