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Hanbit Electronics

HMN328D Datasheet Preview

HMN328D Datasheet

Non-Volatile SRAM MODULE 256Kbit

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HANBit
HMN328D
Non-Volatile SRAM MODULE 256Kbit (32K x 8-Bit),28Pin DIP, 5V
Part No. HMN328D
GENERAL DESCRIPTION
The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits.
The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after VCC returns valid.
The HMN328D uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 70, 85, , 120, 150 ns
w High-density design : 256Kbit Design
w Battery internally isolated until power is applied
w Industry-standard 28-pin 32K x 8 pinout
w Unlimited write cycles
w Data retention in the absence of VCC
w 10-years minimum data retention in absence of power
w Automatic write-protection during power-up/power-down
cycles
w Data is automatically protected during power loss
w Industrial temperature operation
OPTIONS
w Timing
70 ns
85 ns
120 ns
150 ns
MARKING
- 70
- 85
-120
-150
PIN ASSIGNMENT
A14 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
DQ0 11
DQ1 12
DQ2 13
VSS 14
28 VCC
27 /WE
26 A13
25 A8
24 A9
23 A11
22 /O
21 AE10
20 /CE
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
28-pin Encapsulated Package
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
1 HANBit Electronics Co.,Ltd




Hanbit Electronics

HMN328D Datasheet Preview

HMN328D Datasheet

Non-Volatile SRAM MODULE 256Kbit

No Preview Available !

HANBit
HMN328D
FUNCTIONAL DESCRIPTION
The HMN328D executes a read cycle whenever /WE is inactive(high) and /CE is active(low). The address specified by the
address inputs(A0-A14) defines which of the 32,768 bytes of data is accessed. Valid data will be available to the eight data
output drivers within tACC (access time) after the last address input signal is stable.
When power is valid, the HMN328D operates as a standard CMOS SRAM. During power-down and power-up cycles, the
HMN328D acts as a nonvolatile memory, automatically protecting and preserving the memory contents.
The HMN328D is in the write mode whenever the /WE and /CE signals are in the active (low) state after address inputs
are stable. The later occurring falling edge of /CE or /WE will determine the start of the write cycle. The write cycle is
terminated by the earlier rising edge of /CE or /WE. All address inputs must be kept valid throughout the write cycle. /WE
must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The /OE control
signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus been enabled
(/CE and /OE active) then WE will disable the outputs in tODW from its falling edge.
The HMN328D provides full functional capability for Vcc greater than 4.5 V and write protects by 4.37 V nominal. Power-
down/power-up control circuitry constantly monitors the VCC supply for a power-fail-detect threshold VPFD. When VCC falls
below the VPFD threshold, the SRAM automatically write-protects the data. All inputs to the RAM become dont careand
all outputs are high impedance. As Vcc falls below approximately 3 V, the power switching circuit connects the lithium
energy soure to RAM to retain data. During power-up, when Vcc rises above approximately 3.0 volts, the power switching
circuit connects external Vcc to the RAM and disconnects the lithium energy source. Normal RAM operation can resume
after Vcc exceeds 4.5 volts.
BLOCK DIAGRAM
/OE 32K x 8
SRAM
/WE Block
A0-A14
DQ0-DQ7
Power
/CE CON
/CE
Power Fail
VCC
Control
Lithium
Cell
PIN DESCRIPTION
A0-A14 : Address Input
/CE : Chip Enable
VSS : Ground
DQ0-DQ7 : Data In / Data Out
/WE : Write Enable
/OE : Output Enable
VCC: Power (+5V)
NC : No Connection
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
2 HANBit Electronics Co.,Ltd


Part Number HMN328D
Description Non-Volatile SRAM MODULE 256Kbit
Maker Hanbit Electronics
Total Page 9 Pages
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