RF1S9540SM Datasheet | Harris

Features Description - -15A and -19A, -80V and -100V - r DS(ON) = 0.20Ω and 0.30Ω - Single Pulse Avalanche Energy Rated - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly Developmental Type TA17521. Symbol IRF9540 IRF9541 IRF9542 TO-220AB TO-220AB TO-220AB IRF9540 IRF9541 IRF9542 IRF9543 TO-220AB IRF9543 RF1S9540 TO-262AA RF1S9540 TO-263AB RF1S9540 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A. Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-262AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC...