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Harris

RF1S9540SM Datasheet Preview

RF1S9540SM Datasheet

P-Channel MOSFET

No Preview Available !

Semiconductor
July 1998
IRF9540, IRF9541, IRF9542,
IRF9543, RF1S9540, RF1S9540SM
-15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm,
P-Channel Power MOSFETs
Features
Description
• -15A and -19A, -80V and -100V
• rDS(ON) = 0.20and 0.30
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. They can be operated directly from inte-
grated circuits.
Formerly Developmental Type TA17521.
Symbol
D
IRF9540
IRF9541
IRF9542
TO-220AB
TO-220AB
TO-220AB
IRF9540
IRF9541
IRF9542
G
S
IRF9543
TO-220AB
IRF9543
RF1S9540
TO-262AA
RF1S9540
RF1S9540SM
TO-263AB
RF1S9540
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
1
File Number 2282.4




Harris

RF1S9540SM Datasheet Preview

RF1S9540SM Datasheet

P-Channel MOSFET

No Preview Available !

IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF9540, RF1S9540,
RF1S9540SM
IRF9541
IRF9542
IRF9543 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
Continuous Drain Current. . .
TC = 100oC . . . . . . . . . . . .
........
........
...
...
...
...
.........
.........
ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 1) . . . . . . . . . . . . . . . . . . . . . .
-100
-100
-19
-12
-76
±20
150
1
-80
-100
-80
V
-80
-100
-80
V
-19
-15
-15
A
-12
-10
-10
A
-76
-60
-60
A
±20
±20
±20
V
150
150
150
W
1
1
1
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
960
-55 to 175
300
260
960
960
960
mJ
-55 to 175 -55 to 175 -55 to 175
oC
300
300
300
oC
260
260
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
IRF9540, IRF9542,
RF1S9540, RF1S9540SM
BVDSS ID = -250µA, VGS = 0V
(Figure 10)
-100
IRF9541, IRF9543
-80
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF9540, IRF9541,
RF1S9540, RF1S9540SM
VGS(TH) VGS = VDS, ID = -250µA
-2
IDSS VDS = Rated BVDSS, VGS = 0V
-
VTCDS==1205.8oCx Rated BVDSS, VGS = 0V
-
ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V
-19
IRF9542, IRF9543
-15
Gate to Source Leakage Current
IGSS VGS = ±20V
-
Drain to Source On Resistance (Note 2) rDS(ON) ID = -10A, VGS = -10V
IRF9540, IRF9541,
(Figures 8, 9)
-
RF1S9540, RF1S9540SM
IRF9542, IRF9543
-
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON) MAX, ID = -6A
5
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
td(ON) VDD = -50V, ID 19A, RG = 9.1Ω, RL = 2.3Ω,
-
tr
VGS = -10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
-
td(OFF) Independent of Operating Temperature
-
tf
-
Qg(TOT) VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS, -
Ig(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Qgs
Operating Temperature
-
Qgd
-
TYP MAX UNITS
-
-
V
-
-
V
-
-4
V
-
-25 µA
- -250 µA
-
-
A
-
-
A
- ±100 nA
0.15 0.20
0.22 0.30
7
-
S
16
20
ns
65 100 ns
47
70
ns
28
70
ns
70 90 nC
14
-
nC
56
-
nC
2


Part Number RF1S9540SM
Description P-Channel MOSFET
Maker Harris
PDF Download

RF1S9540SM Datasheet PDF






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