RF1S9630SM Datasheet (Intersil Corporation) - 6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs

RF1S9630SM, 6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs

IRF9630, RF1S9630SM Data Sheet July 1999 File Number 2224.3 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other

RF1S9630SM Features

* 6.5A, 200V

* rDS(ON) = 0.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for