RF1S9530SM Datasheet (Intersil Corporation) - 12A/ 100V/ 0.300 Ohm/ P-Channel Power MOSFETs

RF1S9530SM, 12A/ 100V/ 0.300 Ohm/ P-Channel Power MOSFETs

IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high p

RF1S9530SM Features

* 12A, 100V

* rDS(ON) = 0.300Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334, “Guidelines for