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RF1S9530SM P-Channel Power MOSFETs

RF1S9530SM Description

Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power fie.

RF1S9530SM Features

* 12A, 100V
* rDS(ON) = 0.300Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334, “Guidelines fo

RF1S9530SM Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The high input impedance allows these types to be operated directly from integrated circuits. Formerly development

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P-Channel Power MOSFETs Fairchild Semiconductor
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