RF1S9530SM Datasheet - Fairchild Semiconductor

RF1S9530SM P-Channel Power MOSFETs

Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar sw.

RF1S9530SM Features

* 12A, 100V

* rDS(ON) = 0.300Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334, “Guidelines fo

RF1S9530SM Datasheet (109.61 KB)

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Datasheet Details

Part number:

RF1S9530SM

Manufacturer:

Fairchild Semiconductor

File Size:

109.61 KB

Description:

P-channel power mosfets.

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RF1S9530SM P-Channel Power MOSFETs Fairchild Semiconductor

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